TIP140T_09 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – NPN Epitaxial Silicon Darlington Transistor

TIP140T / TIP141T / TIP142T
NPN Epitaxial Silicon Darlington Transistor
Features
• Monolithic Construction With Built In Base-Emitter Shunt Resistors
• High DC Current Gain : h_FE = 1000 @ V_CE = 4V, I_C = 5A (Min.)
• Industrial Use
• Complement to TIP145T/146T/147T
Equivalent Circuit
C
July 2009
B
1
TO-220
1.Base 2.Collector 3.Emitter
R1
R1 ≅ 8kΩ
R2 ≅ 0.12kΩ
R2
E
Absolute Maximum Ratings * T_A = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
V_CBO
Collector-Base Voltage
: TIP140T
: TIP141T
: TIP142T
60
V
80
V
100
V
V_CEO
Collector-Emitter Voltage : TIP140T
: TIP141T
: TIP142T
60
V
80
V
100
V
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current (DC)
10
A
I_CP
Collector Current (Pulse)
15
A
I_B
Base Current (DC)
0.5
A
P_C
Collector Dissipation (T_C=25°C)
80
W
T_J
Junction Temperature
150
°C
T_STG
Storage Temperature
-65 to +150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
© 2009 Fairchild Semiconductor Corporation
TIP140T / TIP141T / TIP142T Rev. B2
1
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