RFD4N06L Datasheet, PDF (3/5 Pages) Intersil Corporation – 4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs

RFD4N06L, RFD4N06LSM
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
5
4
3
2
1
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10
T_J
T_C
=
=
MAX RATED
25^oC
1.0 OPERATION IN THIS AREA
LIMITED BY r_DS(ON)
0.1
1
10
100
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
12
PULSE DURATION = 80µs
T_C = 25^oC
10
V_GS = 10V
V_GS = 7.5V
8
6
V_GS = 5V
4
4.5V
4V
2
3.5V
3V
2.5V
0
2V
0
1
2
3
4
5
6
7
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. SATURATION CHARACTERISTICS
8
V_DS = 10V
7 _{PULSE DURATION = 80µs}
DUTY CYCLE ≤ 2%
6
5
T_C = -40^oC
4
3
T_C = 25^oC
T_C = 125^oC
2
T_C = 125^oC
1
T_C = -40^oC
0
1
2
3
4
5
6
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 5. TRANSFER CHARACTERISTICS
©2002 Fairchild Semiconductor Corporation
1.6
V_GS = 5V
1.4 ^{PULSE DURATION = 80µs}
1.2
T_C = 125^oC
1.0
0.8
0.6
T_C = 25^oC
0.4
T_C = -40^oC
0.2
0
0
2
4
6
8
10
I_D, DRAIN CURRENT (A)
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN
CURRENT
RFD4N06L, RFD4N06LSM Rev. B