RFD4N06L Datasheet, PDF (1/5 Pages) Intersil Corporation – 4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs

Data Sheet
RFD4N06L, RFD4N06LSM
January 2002
4A, 60V, 0.600 Ohm, Logic Level,
N-Channel Power MOSFETs
The RFD4N06L, RFD4N06LSM are N-Channel enhancement
mode silicon gate power field effect transistors specifically
designed for use with logic level (5 volt) driving sources in
applications such as programmable controllers, automotive
switching, and solenoid drivers. This performance is
accomplished through a special gate oxide design which
provides full rated conduction at gate biases in the 3-5 volt
range, thereby facilitating true on-off power control from logic
circuit supply voltages.
Formerly developmental type TA09520.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFD4N06L
TO-251AA
RFD4N06L
RFD4N06LSM
TO-252AA
RFD4N06LSM
NOTE: When ordering, use the entire part number.
Features
• 4A, 60V
• r_DS(ON) = 0.600Ω
• Design Optimized for 5 Volt Gate Drive
• Can be Driven Directly From Q-MOS, N-MOS,
or TTL Circuits
• SOA is Power Dissipation Limited
• 175^oC Rated Junction Temperature
• Logic Level Gate
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-251AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-252AA
DRAIN
(FLANGE)
GATE
SOURCE
©2002 Fairchild Semiconductor Corporation
RFD4N06L, RFD4N06LSM Rev. B