RFD4N06L Datasheet, PDF (2/5 Pages) Intersil Corporation – 4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs

RFD4N06L, RFD4N06LSM
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DS
Drain to Gate Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Maximum Power Dissipation
Derated above 25^oC. . . . .
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P_D
..
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_pkg
RFD4N06L
RFD4N06LSM
60
60
±1 0
4
10
30
0.20
-55 to 175
300
260
UNITS
V
V
V
A
A
W
W/^oC
o_C
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 150^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Voltage (Note 2)
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate Charge at 5V
Threshold Gate Charge
Thermal Resistance Junction to Case
BV_DSS I_D = 1mA, V_GS = 0V
V _GS(TH)
I _DSS
V_GS = V_DS, I_D = 250µA
T_C = 25^oC, V_DS = 50V, V_GS = 0V
T_C = 125^oC, V_DS = 50V, V_GS = 0V
I_GSS V_GS = ±10V, V_DS = 0V
V_DS(ON) I_D = 1A, V_GS = 5V
I_D = 2A, V_GS = 5V
I_D = 4A, V_GS = 7.5V
r_DS(ON) I_D = 1A, V_GS = 5V
V_(plateau) V_DS = 15V, I_D = 4A
t _d(ON)
t_r
V_DD = 30V, I_D = 1A, R_GS = 6.25Ω,
V_GS = 5V
t _d(OFF)
t_f
Q_g(TOT) V_GS = 0-10V
Q_g(5) V_GS = 0-5V
V_DD = 48V,
I_D = 2A,
R_L = 24Ω
Q_g(TH) V_GS = 0-1V
R_θJC
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
V_SD I_SD = 1A
Reverse Recovery Time
t _rr
I_SD = 2A, dI_SD/dt = 100A/µs
NOTES:
2. Pulsed: pulse duration = 300µs max, duty cycle = 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
MIN TYP MAX UNITS
60
-
-
V
1
-
2.5
V
-
-
1
µA
-
-
50
µA
-
-
±100
nA
-
-
0.8
V
-
-
2.0
V
-
-
4.0
V
-
-
0.600
Ω
-
-
4.5
V
-
-
20
ns
-
-
130
ns
-
-
40
ns
-
-
160
ns
-
-
8
nC
-
-
5
nC
-
-
1
nC
-
-
5
o_C/W
MIN TYP MAX UNITS
-
-
1.4
V
-
150
-
ns
©2002 Fairchild Semiconductor Corporation
RFD4N06L, RFD4N06LSM Rev. B