MMBT3906SL_12 Datasheet, PDF (3/5 Pages) Fairchild Semiconductor – PNP Epitaxial Silicon Transistor

Typical Performance Characteristics
Figure 1. DC Current Gain
T =125 oC
J
T =75 ^oC
J
Vce=1V
T =25 oC
J
100
T =-25 oC
J
10
1
10
100
Collector Current, [mA]
Figure 3. Base- Emitter Saturation Voltage
1000
T =-25 ^oC
T =25 ^oC ^J
J
Ic=10*Ib
T =75 oC
J
T =125 oC
J
100
10
100
Collector Current, [mA]
Figure 5. Collector- Base Capacitance
12
f=1mhz
11
9
8
6
0
5
10
Base- Collector Reverse Voltage, V [V]
cb
Figure 2. Collector-Emitter Saturation Voltage
1000
Ic=10*Ib
100
10
T =125 oC
J
T =75 oC
J
T =25 oC
J
T =-25 oC
J
100
Collector Current, [mA]
Figure 4. Collector- Base Leakage Current
100
T =125 oC
J
10
T =75 oC
J
T =25 oC
J
T =-25 ^oC
1
J
10
20
30
40
Base-Collector Revere Voltage, [V]
300
250
200
150
100
50
0
0
Figure 6. Power Derating
25
50
75
100
125
150
Ambient Temperature, T [oC]
a
© 2012 Fairchild Semiconductor Corporation
MMBT3906SL Rev. 1.1.0
3
www.fairchildsemi.com