MMBT3906SL_12 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – PNP Epitaxial Silicon Transistor

MMBT3906SL
PNP Epitaxial Silicon Transistor
Features
• General purpose amplifier transistor
• Ultra small surface mount package for all types (max 0.43mm tall)
• Suitable for general switching & amplification
• Well suited for portable application
• As complementary type, NPN MMBT3904SL is recommended.
• Pb free
COLLECTOR
3
C
E
B
SOT-923F Marking : AB
1
BASE
2
EMITTER
August 2012
Absolute Maximum Ratings T_a = 25°C unless otherwise noted
Symbol
Parameter
Value
Unit
V_CBO
V_CEO
V_EBO
I_C
T_J
T_STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Temperature
Storage Temperature Range
-40
V
-40
V
-5
V
200
mA
150
C
-55 ~ 150
C
* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics* T_a = 25C unless otherwise noted
Symbol
Parameter
P_C
R_JA
Collector Power Dissipation, by R_JA
Thermal Resistance, Junction to Ambient
* Minimum land pad.
Max
227
550
Unit
mW
C/W
© 2012 Fairchild Semiconductor Corporation
MMBT3906SL Rev. 1.1.0
1
www.fairchildsemi.com