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| MMBT3906SL_12 Datasheet, PDF (2/5 Pages) Fairchild Semiconductor – PNP Epitaxial Silicon Transistor | |||
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Electrical Characteristics* Ta = 25ï°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICEX
hFE
VCE (sat)
VBE (sat)
fT
Collector-Base Breakdown Voltage IC = -10ïA, IE = 0
Collector-Emitter Breakdown Voltage IC = -1mA, IB = 0
Emitter-Base Breakdown Voltage IE = -10ïA, IC = 0
Collector Cut-off Current
VCE = -30V, VEB(OFF) = -0.3V
DC Current Gain
VCE = 1V, IC = -0.1mA
VCE = 1V, IC = -1mA
VCE = 1V, IC = -10mA
VCE = 1V, IC = -50mA
VCE = 1V, IC = -100mA
Collector-Emitter Saturation Voltage IC = -10mA, IB = -1mA
IC = -50mA, IB = -5mA
Base-Emitter Saturation Voltage
IC = -10mA, IB = -1mA
IC = -50mA, IB = -5mA
Current Gain Bandwidth Product
VCE = -20V, IC = -10mA,
f = 100MHz
Cob
Output Capacitance
Cib
Input Capacitance
td
Delay Time
tr
Rise Time
ts
Storage Time
tf
Fall Time
VCB = -5V, IE = 0, f = 1MHz
VEB = -0.5V, IC = 0, f = 1MHz
VCC = -3V, IC = -10mA
IB1 = - IB2 = -1mA
* DC Item are tested by Pulse Test: Pulse Widthï£300us, Duty Cycleï£2%
Min.
-40
40
-5
60
80
100
60
30
-0.65
250
Max.
-50
300
-0.25
-0.4
-0.85
-0.95
7.0
15
35
35
225
75
Unit
V
V
V
nA
V
V
V
V
MHz
pF
pF
ns
ns
ns
ns
© 2012 Fairchild Semiconductor Corporation
MMBT3906SL Rev. 1.1.0
2
www.fairchildsemi.com
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