MMBD1401A Datasheet, PDF (3/5 Pages) Fairchild Semiconductor – High Voltage General Purpose Diode

Typical Characteristics (Continued)
725
Ta= 25°C
700
VF - 0.1 to 10 mA
650
600
550
500
450
0.1 0.2 0.3 0.5
1
23 5
10
IF - FORWARD CURRENT (mA)
Figure 5. Forward Voltage vs Forward Current
VF - 0.1 to 10mA
1.4
Ta= 25°C
1.3
1.2
1.1
1
0.9
0.8
0.7
10
20 30 50 100 200 300 500 800
IF - FORWARD CURRENT (mA)
Figure 6. Forward Voltage vs Forward Current
VF - 10 to 800mA
800
Ta= -40°C
600
Ta= 25°C
400
Ta= +80°C
200
0.001 0.003 0.01 0.03 0.1 0.3 1 3 10
IF - FORWARD CURRENT (mA)
Figure 7. Forward Voltage vs Ambient Temperature
VF - 1.0µA - 10mA (- 40 to +80°C)
1.3
Ta= 25°C
1.2
1.1
1
0.9
0.8
0
2
4
6
8 10 12 14 15
REVERSE VOLTAGE (V)
Figure 8. Capacitance vs Reverse Voltage
VR - 0 to 5V
50
40
30
IF = IR = 30 mA
20 ^{Rloop = 100 Ohms}
1
1.5
2
2.5
3
Irr - REVERSE RECOVERY CURRENT (mA)
Figure 9. Reverse Recovery Time vs
Reverse Recovery Current (Irr)
500
400
300
200
100
0
0
IR
Io
-
-
FORWARD
AVERAGE
R^CE^U_C^R_T^R_I^E_F^N_IE^T_D^S_C^T_U^E_R^AD_R^Y_EN^S_T^TA_-^T_mE_A-
mA
50
100
150
T_A - AMBIENT TEMPERATURE ( ^oC)
Figure 10. Average Rectified Current(I_O) &
Forward Current (I_F) vs Ambient Temperature(T_A)
©2004 Fairchild Semiconductor Corporation
MMBD1401A / 1403A / 1404A / 1405A, Rev. A1