MMBD1401A Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – High Voltage General Purpose Diode

MMBD1401A / 1403A / 1404A / 1405A
3
2
1
SOT-23
3
A29
1
2
MARKING
MMBD1401A A29 MMBD1404A A33
MMBD1403A A32 MMBD1405A A34
Connection Diagram
1401A
3
1403A
3
1
2NC
1404A ₃
1
2
1405A
3
1
2
1
2
High Voltage General Purpose Diode
Sourced from Process 2V.
Absolute Maximum Ratings * T_A = 25°C unless otherwise noted
Symbol
W_IV
I_O
I_F
i_f
i_f(surge)
Parameter
Working Inverse Voltage
Average Rectified Current
DC Forward Current
Recurrent Peak Forward Current
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
T_STG
Storage Temperature Range
T_J
Operating Junction Temperature
* These ratings are limiting values above which the serviceability of the diode may be impaired.
Value
175
200
600
700
1.0
2.0
-55 to +150
150
NOTES:
1) These ratings are based on maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
Parameter
Max.
MMBD1401A - 1405A*
P_D
Power Dissipation
350
Derate above 25°C
2.8
R_θJA
Thermal Resistance, Junction to Ambient
* Device mounted on glass epoxy PCB 1.6” × 1.6” × 0.06”; mounting pad for the collector lead min. 0.93 in 2
357
Units
V
mA
mA
mA
A
A
°C
°C
Units
mW
mW/°C
°C/W
©2004 Fairchild Semiconductor Corporation
MMBD1401A / 1403A / 1404A / 1405A, Rev. A1