MMBD1401A Datasheet, PDF (2/5 Pages) Fairchild Semiconductor – High Voltage General Purpose Diode

Electrical Characteristics T_A=25°C unless otherwise noted
Symbol
B_V
I_R
V_F
C_O
T_RR
Parameter
Breakdown Voltage
Reverse Leakage
Forward Voltage
MMBD1401A/1403A
MMBD1404A/1405A
MMBD1401A/1403A
MMBD1404A/1405A
Diode Capacitance
Reverse Recovery Time
Test Conditions
I_R = 100µA
V_R = 120V
V_R = 175V
I_F = 10mA
I_F = 50mA
I_F = 200mA
I_F = 200mA
I_F = 300mA
I_F = 300mA
V_R = 0, f = 1.0MHz
I_F = I_R = 30mA
I_RR = 1.0mA, R_L = 100Ω
Min.
250
760
Max.
40
100
800
920
1.1
1.0
1.25
1.1
2.0
50
Units
V
nA
nA
mV
mV
V
V
V
V
pF
nS
Typical Characteristics
325
Ta= 25°C
300
275
3
5
10
20 30 50
100
IR - REVERSE CURRENT (uA)
Figure 1. Reverse Voltage vs Reverse Current
BV - 1.0 to 100µA
50
Ta= 25°C
40
30
20
10
0
55
75
95 115 135 155 175 195
V R - REVERSE VOLTAGE (V)
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
Figure 2. Reverse Current vs Reverse Voltage
IR - 55 to 205V
100
90 ^{Ta= 25°C}
80
70
60
50
40
30
20
180
200
220
240
V_R - REVERSE VOLTAGE (V)
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten Degree C increase in Temperature
255
Figure 3. Reverse Current vs Reverse Voltage
IR - 180 to 255V
Ta= 25°C
450
400
350
300
250
1
23 5
10 20 30 50 100
IF - FORWARD CURRENT (uA)
Figure 4. Forward Voltage vs Forward Current
VF - 1.0 to 100µA
©2004 Fairchild Semiconductor Corporation
MMBD1401A / 1403A / 1404A / 1405A, Rev. A1