KSK30 Datasheet, PDF (3/5 Pages) Samsung semiconductor – N-CHANNEL (LOW NOISE PRE-AMP. USE)

Typical Characteristics (Continued)
100
IDSS :VDS=10V
VGS=0V
lYFSl:VDS=10V
VGS=0V
10 f=1kHz
Ta = 25℃
1
0.1
0.1
1
10
100
IDSS[mA], DRAIN CURRENT
Figure 7. Yfs-I_DSS
160
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
200
T [oC], CASE TEMPERATURE
C
Figure 9. Power Derating
1000
C_iss: V_DS = 0
C_rss: V_GS = 0
f = 1MHz
100
10
1
0.1
-0
-2
-4
-6
-8
-10
V_GD[V], GATE-DRAIN VOLTAGE
V_GS[V], GATE-SOURCE VOLTAGE
Figure 8. Ciss-V_GS, Crss-V_GD
©2002 Fairchild Semiconductor Corporation
Rev. B1, November 2002