KSK30 Datasheet, PDF (1/5 Pages) Samsung semiconductor – N-CHANNEL (LOW NOISE PRE-AMP. USE)

KSK30
Low Noise PRE-AMP. Use
• High Input Impedance: I_GSS=1nA (MAX)
• Low Noise: NF=0.5dB (TYP)
• High Voltage: V_GDS= -50V
1
TO-92
1. Source 2. Gate 3. Drain
Silicon N-channel Junction Fet
Absolute Maximum Ratings T_a=25°C unless otherwise noted
Symbol
Parameter
V_GDS
I_G
P_D
T_J
T_STG
Gate-Drain Voltage
Gate-Current
Collector Dissipation
Junction Temperature
Storage Temperature
Ratings
-50
10
100
125
-55 ~ 125
Units
V
mA
mW
°C
°C
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BV_GDS
I_GSS
I_DSS
V_GS (off)
Y_FS
C_iss
C_rss
Gate-Drain Breakdown Voltage
Gate Leak Current
Drain Leak Current
Gate-Source Voltage
Forward Transfer Admittance
Input Capacitance
Feedback Capacitance
V_DS=0, I_G= -100µA
V_GS= -30V, V_DS=0
V_DS=10V, V_GS=0
V_DS=10V, I_D=0.1µA
V_DS=10V, V_GS=0, f=1KHz
V_DS=0, V_GS=0, f=1MHz
V_GD=10V, V_DS=0
f=1MHz
NF
Noise Figure
V_DS=15V, V_GS=0
R_G=100KΩ
f=120Hz
Min.
-50
0.3
-0.4
1.2
Typ.
8.2
2.6
0.5
Max.
-1
6.5
-5
Units
V
nA
mA
V
mS
pF
pF
5
dB
I_DSS Classification
Classification
I_DSS(mA)
R
0.30 ~ 0.75
O
0.60 ~ 1.40
Y
1.20 ~ 3.00
G
2.60 ~ 6.50
©2002 Fairchild Semiconductor Corporation
Rev. B1, November 2002