KSK30 Datasheet, PDF (2/5 Pages) Samsung semiconductor – N-CHANNEL (LOW NOISE PRE-AMP. USE)

Typical Characteristics
3.0
VGS = 0V
2.5
VGS = -0.2V
2.0
VGS = -0.4V
1.5
VGS = -0.6V
1.0
VGS = -0.8V
0.5
0.0
-410.6
VGS = -1.2V
VGS = -1.4V
VGS = -1.6V
-02.08
0
VGS[V], DRAIN-SOURCE
VOLTAGE
VGS = -1.0V
20
40
60
VDS[V], DRAIN-SOURCE
VOLTAGE
Figure 1. Static Characteristic
4.0
3.2
2.4
1.6
0.8
0.0
0.0
VGS = 0V
VGS = -0.2V
VGS = -0.4V
VGS = -0.6V
VGS = -0.8V
VGS = -1.2V VGS = -1.0V
VGS = -1.6V VGS = -1.4V
0.8
1.6
2.4
3.2
4.0
VDS[V], DRAIN-SOURCE VOLTAGE
Figure 3. I_D-V_DS
6.4
VDS = 10V
f = 1kHz
4.8
3.2
= ^{0.7mAIDSS = 1.7mAIDSS = 2.8mA}
IDSS ^{= 6mA}
I DSS
1.6
0.0
0.0
1.6
3.2
4.8
6.4
ID[mA], DRAIN CURRENT
Figure 5. Yfs-I_D
©2002 Fairchild Semiconductor Corporation
6.4
5.6
VDS = 10V
4.8
4.0
3.2
2.4
RS = 1kΩ
1.6
RS = 2kΩ
0.8
RS = 5kΩ
RS = 10kΩ
0.0
-3.2
-2.8
-2.4
-2.0
-1.6 -1.2
-0.8
-0.4
0.0
VGS[V], GATE-SOURCE VOLTAGE
Figure 2. I_D-V_GS
4.0
VDS = 10V
f = 1KHz
3.2
2.4
1.6
0.8
0.0
-4.0
-3.2
-2.4
-1.6
-0.8
0.0
VGS[V], GATE-SOURCE VOLTAGE
Figure 4. Yfs-V_GS
-10
IDSS
:VDS= 10V
VGS=0
VGS(off):VDS=10V
ID = 0.1µA
-1
- 0.1
0.1
1
10
IDSS[mA], DRAIN CURRENT
Figure 6. V_GS(off)-I_DSS
Rev. B1, November 2002