IRF750A Datasheet, PDF (3/7 Pages) Fairchild Semiconductor – Advanced Power MOSFET

N-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics
V_GS
Top : 15V
10 V
8.0 V
7.0 V
10¹
6.0 V
5.5 V
5.0 V
Bottom : 4.5V
10⁰
10^-1_10-1
@ Notes :
1. 250 µs Pulse Test
2. T_C = 25 ^oC
10⁰
10¹
V_DS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
0.60
0.45
V_GS = 10 V
0.30
0.15
0.00
0
V_GS = 20 V
@ Note : T_J = 25 ^oC
10
20
30
40
50
60
70
I_D , Drain Current [A]
Fig 5. Capacitance vs. Drain-Source Voltage
4000
C_iss= C_gs+ C_gd ( C_ds= shorted )
C_oss= C_ds+ C_gd
C_rss= C_gd
3000
C _iss
2000
C _oss
1000
C _rss
@ Notes :
1. V_GS = 0 V
2. f = 1 MHz
0
10⁰
10¹
V_DS , Drain-Source Voltage [V]
IRF750A
Fig 2. Transfer Characteristics
10¹
150 ^oC
10⁰
25 ^oC
10^-1
2
- 55 ^oC
@ Notes :
1. V_GS = 0 V
2. V_DS = 50 V
3. 250 µs Pulse Test
4
6
8
10
V_GS , Gate-Source Voltage [V]
Fig 4. Source-Drain Diode Forward Voltage
10¹
10⁰
10^-1
0.2
150 ^oC
25 ^oC
@ Notes :
1. V_GS = 0 V
2. 250 µs Pulse Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
V_SD , Source-Drain Voltage [V]
Fig 6. Gate Charge vs. Gate-Source Voltage
V_DS = 80 V
10
V_DS = 200 V
V_DS = 320 V
5
@ Notes : I_D = 17.0 A
0
0
20
40
60
80
100
120
Q_G , Total Gate Charge [nC]
3