IRF750A Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Advanced Power MOSFET

Advanced Power MOSFET
IRF750A
FEATURES
♦ Avalanche Rugged Technology
♦ Rugged Gate Oxide Technology
♦ Lower Input Capacitance
♦ Improved Gate Charge
♦ Extended Safe Operating Area
♦ Lower Leakage Current : 10 µA (Max.) @ V_DS = 400V
♦ Low R_DS(ON) : 0.254 Ω (Typ.)
Absolute Maximum Ratings
Symbol
V_DSS
I_D
I_DM
V_GS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J , T_STG
T_L
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T_C=25°C)
Continuous Drain Current (T_C=100°C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
(3)
Total Power Dissipation (T_C=25°C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
Thermal Resistance
Symbol
R_θJC
R_θCS
R_θJA
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
BV_DSS = 400 V
R_DS(on) = 0.3 Ω
I_D = 15 A
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Value
400
15
9.5
60
±30
1157
15
15.6
4.0
156
1.25
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Typ.
--
0.5
--
Max.
0.8
--
62.5
Units
°C/W
1