IRF750A Datasheet, PDF (2/7 Pages) Fairchild Semiconductor – Advanced Power MOSFET

IRF750A
N-CHANNEL
POWER MOSFET
Electrical Characteristics (T_C=25°C unless otherwise specified)
Symbol
BV_DSS
∆BV/∆T_J
V_GS(th)
I_GSS
I_DSS
R_DS(on)
g_fs
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
Q_g
Q_gs
Q_gd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain (“Miller”) Charge
400 -- -- V
-- 0.46 -- V/°C
2.0 -- 4.0 V
-- -- 100 _nA
-- -- -100
-- -- 10
-- -- 100 ^µA
-- -- 0.3 Ω
-- 11.1 --
-- 2140 2780
-- 305 350 _pF
-- 134 155
-- 20 50
-- 22 55
-- 100 210 ^ns
-- 32 75
-- 101 131
-- 14 -- nC
-- 51.5 --
V_GS=0V,I_D=250µA
I_D=250µA See Fig 7
V_DS=5V,I_D=250µA
V_GS=30V
V_GS=-30V
V_DS=400V
V_DS=320V,T_C=125°C
V_GS=10V,I_D=7.5A
(4)
V_DS=50V,I_D=7.5A
(4)
V_GS=0V,V_DS=25V,f =1MHz
See Fig 5
V_DD=200V,I_D=17A,
R_G=6.2Ω
See Fig 13
(4) (5)
V_DS=320V,V_GS=10V,
I_D=17A
See Fig 6 & Fig 12 (4) (5)
Source-Drain Diode Ratings and Characteristics
Symbol
Characteristic
I_S
Continuous Source Current
I_SM
Pulsed-Source Current
(1)
V_SD Diode Forward Voltage
(4)
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
-- -- 15
Integral reverse pn-diode
A
-- -- 60
in the MOSFET
-- -- 1.5 V ^TJ^=25°C,IS^=15A,VGS^=0V
-- 385 -- ns ^TJ^=25°C,IF^=17A
-- 4.85 -- µC ^diF^{/dt=100A/µs}
(4)
Notes ;
(1) Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
(2) L=9mH, I_AS=15A, V_DD=50V, R_G=27Ω, Starting T_J =25°C
(3) I_SD ≤ 17A, di/dt ≤ 250A/µs, V_DD ≤ BV_DSS , Starting T_J =25°C
(4) Pulse Test : Pulse Width = 250µs, Duty Cycle ≤ 2%
(5) Essentially Independent of Operating Temperature
2