FQT4N20LTF Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – N-Channel QFET® MOSFET 200 V, 0.85 A, 1.40 Ω

Typical Characteristics
Top :
1V0^GV^S
8.0 V
6.0 V
5.0 V
4.5 V
10⁰
4.0 V
3.5 V
Bottom : 3.0 V
10^-1
10^-1
※ Notes :
1. 250μ s Pulse Test
2. T_C = 25℃
10⁰
10¹
V_DS , Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
8
6
V_GS = 5 V
V_GS = 10V
4
2
0
0
2
4
6
8
I_D , Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
450
400
350
300
250
200
150
100
50
0
10^-1
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
C_iss
C_oss
C_rss
※ Notes :
1. V_GS = 0 V
2. f = 1 MHz
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
FQT4N20L Rev. C0
10⁰
150℃
25℃
-55℃
※ Notes :
1.
2.
2V5^D0^S μ⁼
30V
s Pulse
Test
10^-1
0
2
4
6
8
10
V_GS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10⁰
10^-1
0.2
150℃ 25℃
※ Notes :
1.
2.
2V5^G0^Sμ^=s0VPulse
Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
V_SD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
V_DS = 40V
8
V_DS = 100V
V_DS = 160V
6
4
2
※ Note : I_D = 3.8 A
0
0
1
2
3
4
5
6
7
8
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
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