FQT4N20LTF Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel QFET® MOSFET 200 V, 0.85 A, 1.40 Ω

FQT4N20L
N-Channel QFET^® MOSFET
200 V, 0.85 A, 1.40 Ω
March 2013
Description
Features
This N-Channel enhancement mode power MOSFET is • ^{0.85 A, 200 V, R}DS(on)^{=1.35 Ω(Typ.)@V}GS^{=10 V, I}D^{=0.425 A}
produced using Fairchild Semiconductor^®’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
• Low Gate Charge (Typ. 4 nC)
• Low C_rss (Typ. 6 pF)
reduce on-state resistance, and to provide superior
• 100% Avalanche Tested
switching performance and high avalanche energy
• Low Level Gate Drive Requirments Allowing Direct Operation
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
From Logic Drives
electronic lamp ballasts.
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Absolute Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain-Source Voltage
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 70°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (T_C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
R_θJA
Parameter
Thermal Resistance, Junction-to-Ambient *
* When mounted on the minimum pad size recommended (PCB Mount)
FQT4N20L
200
0.85
0.68
3.4
± 20
52
0.85
0.22
5.5
2.2
0.018
-55 to +150
300
Typ
Max
--
57
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
©2001 Fairchild Semiconductor Corporation
FQT4N20L Rev. C0
www.fairchildsemi.com