FQT4N20LTF Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – N-Channel QFET® MOSFET 200 V, 0.85 A, 1.40 Ω

Electrical Characteristics
Symbol
Parameter
T_C = 25°C unless otherwise noted
Test Conditions
Min Typ Max Unit
Off Characteristics
BV_DSS Drain-Source Breakdown Voltage
V_GS = 0 V, I_D = 250 µA
200 --
∆B_VDSS/ _{Breakdown Voltage Temperature}
∆T_J
Coefficient
I_D = 250 µA, Referenced to 25°C -- 0.16
I_DSS
Zero Gate Voltage Drain Current
V_DS = 200 V, V_GS = 0 V
V_DS = 160 V, T_C = 125°C
--
--
--
--
I_GSSF
Gate-Body Leakage Current, Forward V_GS = 20 V, V_DS = 0 V
--
--
I_GSSR
Gate-Body Leakage Current, Reverse V_GS = -20 V, V_DS = 0 V
--
--
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
V_GS(th) Gate Threshold Voltage
R_DS(on)
Static Drain-Source
On-Resistance
g_FS
Forward Transconductance
V_DS = V_GS, I_D = 250 µA
1.0 --
2.0
V
V_GS = 10 V, I_D = 0.425 A
V_GS = 5 V, I_D = 0.425 A
--
1.10 1.35
1.13 1.40
Ω
V_DS = 30 V, I_D = 0.425 A _{(Note 4)} -- 1.42
--
S
Dynamic Characteristics
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
V_DS = 25 V, V_GS = 0 V,
f = 1.0 MHz
-- 240 310
pF
--
36
45
pF
--
6
8
pF
Switching Characteristics
t_d(on)
Turn-On Delay Time
t_r
Turn-On Rise Time
t_d(off)
Turn-Off Delay Time
t_f
Turn-Off Fall Time
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
V_DD = 100 V, I_D = 3.8 A,
R_G = 25 Ω
--
7
25
ns
--
70 150
ns
--
15
40
ns
(Note 4, 5)
--
40
90
ns
V_DS = 160 V, I_D = 3.8 A,
-- 4.0 5.2
nC
V_GS = 5 V
-- 1.0
--
nC
(Note 4, 5) _--
1.9
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
I_S
Maximum Continuous Drain-Source Diode Forward Current
--
--
0.85
A
I_SM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
3.4
A
V_SD
Drain-Source Diode Forward Voltage V_GS = 0 V, I_S = 0.85 A
--
--
1.5
V
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
V_GS = 0 V, I_S = 3.8 A,
--
90
--
ns
dI_F / dt = 100 A/µs
(Note 4)
--
0.25
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 108mH, I_AS = 0.85A, V_DD = 50V, R_G = 25 Ω, Starting T_J = 25°C
3. I_SD ≤ 3.8A, di/dt ≤ 300A/µs, V_DD ≤ BV_DSS, Starting T_J = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2001 Fairchild Semiconductor Corporation
FQT4N20L Rev. C0
www.fairchildsemi.com