FQT2P25TF Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – P-Channel QFET MOSFET

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V_GS
Top : -15.0 V
-10.0 V
10⁰
-8.0 V
-7.0 V
-6.5 V
-6.0 V
Bottom : -5.5 V
10^-1
10^-1
※ Notes :
1. 250μ s Pulse Test
2. T_C = 25℃
10⁰
10¹
-V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
15
12
V = - 10V
GS
9
V = - 20V
GS
6
3
※ Note : T = 25℃
J
0
0.0
1.5
3.0
4.5
6.0
-I_D , Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
400
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
300
C
iss
C_oss
200
※ Notes :
C_rss
1. V_GS = 0 V
2. f = 1 MHz
100
0
10^-1
10⁰
10¹
-V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
10⁰
10^-1
2
150℃
25℃
-55℃
※ Notes :
1.
2.
2V5^DS0μ⁼
-40V
s Pulse
Test
4
6
8
10
-V_GS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10⁰
150℃
25℃
※ Notes :
1. V = 0V
2. 25^G0^Sμ s Pulse Test
10^-1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
-V , Source-Drain Voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
V = -50V
DS
10
V_DS = -125V
V = -200V
DS
8
6
4
2
※ Note : I_D = -2.3 A
0
0
1
2
3
4
5
6
7
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2001 Fairchild Semiconductor Corporation
3
FQT2P25 Rev. C0
www.fairchildsemi.com