FQT2P25TF Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – P-Channel QFET MOSFET

Package Marking and Ordering Information
Part Number
FQT2P25TF
Top Mark
FQT2P25
Package
SOT-223
Packing Method Reel Size
Tape and Reel
13 "
Tape Width
12 mm
Quantity
4000 units
Electrical Characteristics T_C = 25^oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min Typ Max Unit
Off Characteristics
BV_DSS Drain-Source Breakdown Voltage
V_GS = 0 V, I_D = -250 µA
-250 --
∆B_VDSS/ _{Breakdown Voltage Temperature}
∆T_J
Coefficient
I_D = -250 µA, Referenced to 25°C -- -0.2
I_DSS
Zero Gate Voltage Drain Current
V_DS = -250 V, V_GS = 0 V
V_DS = -200 V, T_C = 125°C
--
--
--
--
I_GSSF
Gate-Body Leakage Current, Forward V_GS = -30 V, V_DS = 0 V
--
--
I_GSSR
Gate-Body Leakage Current, Reverse V_GS = 30 V, V_DS = 0 V
--
--
On Characteristics
V_GS(th) Gate Threshold Voltage
R_DS(on) Static Drain-Source
On-Resistance
g_FS
Forward Transconductance
V_DS = V_GS, I_D = -250 µA
V_GS = -10 V, I_D = -0.275 A
V_DS = -40 V, I_D = -0.275 A
-3.0 --
-- 3.15
-- 0.6
Dynamic Characteristics
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
V_DS = -25 V, V_GS = 0 V,
f = 1.0 MHz
-- 190
--
40
-- 6.5
Switching Characteristics
t_d(on)
Turn-On Delay Time
t_r
Turn-On Rise Time
t_d(off)
Turn-Off Delay Time
t_f
Turn-Off Fall Time
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
V_DD = -125 V, I_D = -2.3 A,
R_G = 25 Ω
-- 8.5
--
40
--
12
(Note 4) _--
25
V_DS = -200 V, I_D = -2.3 A,
-- 6.5
V_GS = -10 V
-- 1.8
(Note 4) --
3.0
--
--
-1
-10
-100
100
-5.0
4.0
--
250
55
8.5
25
90
35
60
8.5
--
--
V
V/°C
µA
µA
nA
nA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I_S
Maximum Continuous Drain-Source Diode Forward Current
I_SM
Maximum Pulsed Drain-Source Diode Forward Current
V_SD
Drain-Source Diode Forward Voltage V_GS = 0 V, I_S = -0.55 A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
V_GS = 0 V, I_S = -2.3 A,
dI_F / dt = 100 A/µs


1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 635 mH, IAS = -0.55 A, VDD = -50 V, RG = 25 Ω, starting TJ = 25^oC.
3. ISD ≤ -2.3 A, di/dt ≤ 300 A/μs, VDD ≤ BVDSS, starting TJ = 25^oC.
4. Essentially independent of operating temperature.
--
-- -0.55
A
--
--
-2.2
A
--
--
-5.0
V
-- 110
--
ns
-- 0.4
--
µC
©2001 Fairchild Semiconductor Corporation
2
FQT2P25 Rev. C0
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