FQT2P25TF Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – P-Channel QFET MOSFET

FQT2P25
P-Channel QFET^® MOSFET
-250 V, -0.55 A, 4.0 Ω
November 2013
Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology. This advanced
technology has been especially tailored to minimize on-
state resistance, provide superior switching performance,
and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high
efficiency switching DC/DC converters.
Features
• -0.55 A, -250 V, R_DS(on) = 4.0 Ω (Max.) @ V_GS = -10 V,
I_D = -0.275 A
• Low Gate Charge (Typ. 6.5 nC)
• Low Crss (Typ. 6.5 pF)
• 100% Avalanche Tested
D
SOT-223
S
D
G
D
G
D
S
Absolute Maximum Ratings T_C = 25^oC unless otherwise noted.
Symbol
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain-Source Voltage
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (T_C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
R_θJA
Thermal Resistance, Junction-to-Ambient *
* When mounted on the minimum pad size recommended (PCB Mount)
FQT2P25TF
-250
-0.55
-0.35
-2.2
± 30
120
-0.55
0.25
-5.5
2.5
0.02
-55 to +150
300
FQT2P25TF
50
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
©2001 Fairchild Semiconductor Corporation
1
FQT2P25 Rev. C0
www.fairchildsemi.com