FQPF22P10 Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 100V P-Channel MOSFET

Typical Characteristics
V_GS
Top : -15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.0 V
-5.5 V
10¹
-5.0 V
Bottom : -4.5 V
10⁰
10^-1
※ Notes :
1. 250μ s Pulse Test
2. T_C = 25℃
10⁰
10¹
-V_DS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
0.5
0.4
V = - 10V
GS
0.3
V = - 20V
GS
0.2
0.1
※ Note : T_J = 25℃
0.0
0 10 20 30 40 50 60 70 80 90 100
-I , Drain Current [A]
D
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
3500
3000
2500
2000
1500
1000
500
0
10^-1
C
iss
C
oss
C_rss
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
※ Notes :
1. V = 0 V
GS
2. f = 1 MHz
10⁰
10¹
-V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
10¹
175℃
10⁰
25℃
10^-1
2
-55℃
※ Notes :
1.
2.
2V5^DS0μ^=s-4P0uVlse
Test
4
6
8
10
-V_GS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10¹
10⁰
175℃ 25℃
※ Notes :
1. V =0V
2. 25^G0^Sμ s Pulse Test
10^-1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
-V_SD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
V = -20V
10
DS
V = -50V
DS
8
V = -80V
DS
6
4
2
※ Note : I_D = -22 A
0
0
10
20
30
40
50
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2002 Fairchild Semiconductor Corporation
Rev. B, August 2002