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FQPF22P10 Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – 100V P-Channel MOSFET
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Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
/ ∆TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = -250 µA
-100 --
ID = -250 µA, Referenced to 25°C -- -0.1
IDSS
Zero Gate Voltage Drain Current
VDS = -100 V, VGS = 0 V
VDS = -80 V, TC = 125°C
--
--
--
--
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V
--
--
--
--
--
--
-1
-10
-100
100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = -250 µA
-2.0 --
-4.0
V
VGS = -10 V, ID = -6.6 A
-- 0.096 0.125 Ω
VDS = -40 V, ID = -6.6 A (Note 4)
--
11
--
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
-- 1170 1500 pF
-- 460 600 pF
-- 160 200 pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = -50 V, ID = -22 A,
RG = 25 Ω
--
17
45
ns
--
170 350
ns
--
60 130
ns
(Note 4, 5)
--
110 230
ns
VDS = -80 V, ID = -22 A,
--
40
50
nC
VGS = -10 V
-- 7.0
--
nC
(Note 4, 5)
--
21
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = -13.2 A
--
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = -22 A,
--
dIF / dt = 100 A/µs
(Note 4)
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 6.1mH, IAS = -13.2A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ -22A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
-- -13.2 A
-- -52.8 A
--
-4.0
V
110
--
ns
0.6
--
µC
©2002 Fairchild Semiconductor Corporation
Rev. B, August 2002
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