FMBSA06 Datasheet, PDF (3/5 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier

Typical Characteristics (Continued)
Between Emitter-Base
117
116
115
114
113
112
111
0.1
1
10
100
1000
RESISTANCE (kΩ)
Ω
Figure 7. Collector-Emitter Breakdown Voltage
with Resistance Between Emitter-Base
vs Collector Current
400
VCE = 5V
350
300
250
200
150
100
1
10
20
50
100
I _C - COLLECTOR CURRENT (mA)
Figure 9. Gain Bandwidth Product
vs Collector Current
100
f = 1.0 MHz
C _ib
10
Cob
1
0.1
0.1
1
10
100
V _CE - COLLECTOR VOLTAGE (V)
Figure 8. Input and Output Capacitance
vs Reverse Voltage
©2004 Fairchild Semiconductor Corporation
Rev. A1, November 2004