FMBSA06 Datasheet, PDF (2/5 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier

Typical Characteristics
vs Collector Current
200
V_CE= 1V
125 °C
150
25 °C
100
- 40 °C
50
0.001
0.01
0.1
I _C - COLLECTOR CURRENT (A)
Figure 1. Typical Pulsed Current Gain
vs Collector Current
Voltage vs Collector Current
1 ^{β = 10 β}
0.8 _β
0.6
- 40 °C
25 °C
125 °C
0.4
0.1
β
1
10
100
I _C - COLLECTOR CURRE NT (mA)
1000
Figure 3. Base-Emitter Saturation Voltage
vs Collector Current
10
V_CB = 80 V
1
0.1
0.01
0.001
25
50
75
100
125
T_A - AMBIE NT TEMP ERATURE (_° C)
Figure 5. Collector Cutoff Current
vs Ambient Temperature
©2004 Fairchild Semiconductor Corporation
Collector-Emitter Saturation
Voltage vs Collector Current
0.5
β β = 10
0.4
0.3
0.2
0.1
0
0.1
125 °C
25 °C
- 40 °C
1
10
100
I _C - COLLECTOR CURRE NT (mA)
1 00 0
Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
1
0.8
0.6
0.4
0.2
0
1
Collector Current
- 40 °C
25 °C
125 °C
V_CE = 5V
10
100
I _C - COLLECTOR CURRE NT (mA)
1000
Figure 4. Base-Emitter On Voltage
vs Collector Current
Collector Saturation Region
2
TA = 25°C
1.5
1
I _C = 1 mA
0.5
10 mA
100 mA
0
4000
10000
20000 30000
I _B - BASE CURRENT (uA)
50000
Figure 6. Collector Saturation Region
Rev. A1, November 2004
Ω
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