FMBSA06 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier

FMBSA06
NPN General Purpose Amplifier
• This device is designed for general purpose amplifier applications at
collector currents to 300 mA.
• Sourced from Process 12.
NC
C1
E
B
C
pin #1 ^C
SuperSOT^TM-6 single
Mark: .1G1
Absolute Maximum Ratings* T_a=25°C unless otherwise noted
Symbol
Parameter
V_CEO
Collector-Emitter Voltage
V_CBO
Collector-Base Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current
- Continuous
T_J, T_STG
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Value
80
80
4.0
500
- 55 ~ 150
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min.
Off Characteristics
V_(BR)CEO
Collector-Emitter Sustaining Voltage * I_C = 1.0mA, I_B = 0
80
V_(BR)EBO
Emitter-Base Breakdown Voltage
I_E = 100µA, I_C = 0
4.0
I_CEO
Collector Cut-off Current
V_CE = 60V, I_B = 0
I_CBO
Collector Cut-off Current
V_CB = 80V, I_E = 0
On Characteristics
h_FE
DC Current Gain
I_C = 10mA, V_CE = 1.0V
100
I_C = 100mA, V_CE = 1.0V
100
V_CE(sat)
Collector-Emitter Saturation Voltage
I_C = 100mA, I_B = 10mA
V_BE(on)
Base-Emitter On Voltage
I_C = 10mA, V_CE = 1.0V
Small Signal Characteristics
f_T
Current Gain Bandwidth Product
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
I_C = 10mA, V_CE = 2.0V, f = 100MHz 100
Max.
0.1
0.1
0.25
1.2
Units
V
V
µA
µA
V
V
MHz
Thermal Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
P_D
Total Device Dissipation *
R_θJA
Thermal Resistance, Junction to Ambient, total
* Device mounted on a 1 in 2 pad of 2 oz copper.
Max.
700
180
Units
mW
°C/W
©2004 Fairchild Semiconductor Corporation
Rev. A1, November 2004