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FGH40N60UFDTU Datasheet, PDF (3/9 Pages) Fairchild Semiconductor – High Current Capability
Electrical Characteristics of the Diode TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
VFM
Diode Forward Voltage
IF = 20A
TC = 25oC
TC = 125oC
trr
Qrr
Diode Reverse Recovery Time
IF =20A, dIES/dt = 200A/s
Diode Reverse Recovery Charge
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
Min.
-
-
-
-
-
-
Typ.
1.95
1.85
45
140
75
375
Max
2.6
-
-
-
-
-
Unit
V
ns
nC
©2008 Fairchild Semiconductor Corporation
3
FGH40N60UFD Rev. C0
www.fairchildsemi.com