FGH40N60UFDTU Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – High Current Capability

April 2013
FGH40N60UFD
600 V, 40 A Field Stop IGBT
Features
• High Current Capability
• Low Saturation Voltage: V_CE(sat) = 1.8 V @ I_C = 40 A
• High Input Impedance
• Fast Switching
• RoHS Compliant
Applications
• Solar Inverter, UPS, Welder, PFC, Microwave Oven, Tele-
com, ESS
General Description
Using novel field stop IGBT technology, Fairchild^®’s field stop
IGBTs offer the optimum performance for solar inverter, UPS,
welder, microwave oven, telecom, ESS and PFC applications
where low conduction and switching losses are essential.
E
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
V_CES
V_GES
I_C
I_{CM (1)}
P_D
T_J
T_stg
T_L
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ T_C = 25^oC
@ T_C = 100^oC
@ T_C = 25^oC
@ T_C = 25^oC
@ T_C = 100^oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R_JC(IGBT)
R_JC(Diode)
R_JA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
C
G
E
Ratings
600
 20
80
40
120
290
116
-55 to +150
-55 to +150
300
Typ.
-
-
-
Max.
0.43
1.45
40
Unit
V
V
A
A
A
W
W
o_C
o_C
o_C
Unit
o_C/W
o_C/W
o_C/W
©2008 Fairchild Semiconductor Corporation
1
FGH40N60UFD Rev. C0
www.fairchildsemi.com