FGH40N60UFDTU Datasheet, PDF (2/9 Pages) Fairchild Semiconductor – High Current Capability

Package Marking and Ordering Information
Device Marking
Device
FGH40N60UFD FGH40N60UFDTU
Package
TO-247
Packaging
Type
Tube
Qty per Tube
30ea
Max Qty
per Box
-
Electrical Characteristics of the IGBT T_C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
Off Characteristics
BV_CES
BV_CES
T_J
I_CES
I_GES
Collector to Emitter Breakdown Voltage V_GE = 0V, I_C = 250A
Temperature Coefficient of Breakdown
Voltage
V_GE = 0V, I_C = 250A
Collector Cut-Off Current
G-E Leakage Current
V_CE = V_CES, V_GE = 0V
V_GE = V_GES, V_CE = 0V
On Characteristics
V_GE(th)
G-E Threshold Voltage
V_CE(sat) Collector to Emitter Saturation Voltage
I_C = 250A, V_CE = V_GE
I_C = 40A, V_GE = 15V
I_C = 40A, V_GE = 15V,
T_C = 125^oC
Dynamic Characteristics
C_ies
C_oes
C_res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V_CE = 30V_, V_GE = 0V,
f = 1MHz
Switching Characteristics
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
Q_g
Q_ge
Q_gc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
V_CC = 400V, I_C = 40A,
R_G = 10, V_GE = 15V,
Inductive Load, T_C = 25^oC
V_CC = 400V, I_C = 40A,
R_G = 10, V_GE = 15V,
Inductive Load, T_C = 125^oC
V_CE = 400V, I_C = 40A,
V_GE = 15V
600
-
-
V
-
0.6
-
V/^oC
-
-
250
A
-
-
±400
nA
4.0
5.0
6.5
V
-
1.8
2.4
V
-
2.0
-
V
-
2110
-
pF
-
200
-
pF
-
60
-
pF
-
24
-
ns
-
44
-
ns
-
112
-
ns
-
30
60
ns
-
1.19
-
mJ
-
0.46
-
mJ
-
1.65
-
mJ
-
24
-
ns
-
45
-
ns
-
120
-
ns
-
40
-
ns
-
1.2
-
mJ
-
0.69
-
mJ
-
1.89
-
mJ
-
120
-
nC
-
14
-
nC
-
58
-
nC
©2008 Fairchild Semiconductor Corporation
2
FGH40N60UFD Rev. C0
www.fairchildsemi.com