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FGA50N100BNTDTU Datasheet, PDF (3/7 Pages) Fairchild Semiconductor – 1000 V NPT Trench IGBT
◁
100
Common Emitter
20V
T = 25oC
15V
8V
C
10V
80
9V
60
40
20
0
0
7V
V = 6V
GE
1
2
3
4
5
Collector-Emitter Voltage, V [V]
CE
Fig 1. Typical Output Characteristics
90
Common Emitter
80
V = 15V
GE
Tc = 25oC
70 Tc = 125oC
60
50
40
30
20
10
0
0
1
2
3
4
Collector-Emitter Voltage, V [V]
CE
Fig 2. Typical Saturation Voltage Characteristics
Common Emitter
V =15V
GE
3
80A
60A
2
30A
I =10A
C
1
-50
0
50
100
150
Case Temperature, T [oC]
C
Fig 3. Saturation Voltage vs. Case
Temperature at Varient Current Level
10
Common Emitter
T = 25oC
C
8
6
30A
4
60A
80A
2
I = 10A
C
0
4
8
12
16
20
Gate-Emitter Voltage, V [V]
GE
Fig 5. Saturation Voltage vs. VGE
10
Common Emitter
T = - 40 OC
C
8
6
30A
4
60A
80A
2
I =10A
C
0
4
8
12
16
20
Gate-Emitter Voltage, V [V]
GE
Fig 4. Saturation Voltage vs. VGE
10
Common Emitter
T = 125oC
C
8
30A
6
60A
80A
4
2
I = 10A
C
0
4
8
12
16
20
Gate-Emitter Voltage, V [V]
GE
Fig 6. Saturation Voltage vs. VGE
©2006 Fairchild Semiconductor Corporation
3
FGA50N100BNTD Rev. C1
www.fairchildsemi.com
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