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| FGA50N100BNTDTU Datasheet, PDF (2/7 Pages) Fairchild Semiconductor – 1000 V NPT Trench IGBT | |||
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Package Marking and Ordering Information
Part Number
Top Mark Package
FGA50N100BNTDTU FGA50N100BNTD TO-3P
Packing
Method
Rail / Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30
Electrical Characteristics of IGBT TC = 25ï°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVCES
ICES
IGES
Collector Emitter Breakdown Voltage
Collector Cut-Off Current
G-E Leakage Current
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VGE = 0 V, IC = 1 mA
VCE = 1000 V, VGE = 0 V
VGE = ± 25 V, VCE = 0 V
IC = 60 mA, VCE = VGE
IC = 10 A, VGE = 15 V
IC = 60 A, VGE = 15 V
VCE=10 V, VGE = 0 V,
f = 1 MHz
VCC = 600 V, IC = 60 A,
RG = 51 ï, VGE=15 V,
Resistive Load, TC = 25ï°C
VCE = 600 V, IC = 60 A,
VGE = 15 V , , TC = 25ï°C
Electrical Characteristics of DIODE TC = 25ï°C unless otherwise noted
Symbol
VFM
trr
IR
Parameter
Diode Forward Voltage
Diode Reverse Recovery Time
Instantaneous Reverse Current
Test Conditions
IF = 15 A
IF = 60 A
IF = 60 A diF/dt = 20 A/us
VRRM = 1000 V
Min. Typ. Max. Unit
1000
--
--
--
--
V
--
1.0
mA
-- ± 500 nA
4.0
5.0
7.0
V
--
1.5 1.8
V
--
2.5 2.9
V
-- 6000 --
pF
--
260
--
pF
--
200
--
pF
--
140
--
ns
--
320
--
ns
--
630
--
ns
--
130 250
ns
--
275 350 nC
--
45
--
nC
--
95
--
nC
Min. Typ. Max. Unit
--
1.2 1.7
V
--
1.8 2.1
V
1.2 1.5
us
-- 0.05 2
uA
©2006 Fairchild Semiconductor Corporation
2
FGA50N100BNTD Rev. C2
www.fairchildsemi.com
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