FGA50N100BNTDTU Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – 1000 V NPT Trench IGBT

November 2013
FGA50N100BNTD
1000 V NPT Trench IGBT
General Description
Using Fairchild's proprietary trench design and advanced
NPT technology, the 1000V NPT IGBT offers superior
conduction and switching performances, high avalanche
ruggedness and easy parallel operation. This device offers
the optimum performance for hard switching application
such as UPS, welder applications.
Features
• High Speed Switching
• Low Saturation Voltage : V_CE(sat) = 2.5 V @ I_C = 60 A
• High Input Impedance
• Built-in Fast Recovery Diode
Application
UPS, Welder, Induction Heating, Microwave Oven
C
GCE
TO-3P
Absolute Maximum Ratings T_C = 25C unless otherwise noted
Symbol
V_CES
V_GES
I_C
I_{CM (1)}
I_F
P_D
T_J
T_stg
T_L
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ T_C = 25C
@ T_C = 100C
Diode Continuous Forward Current
Diode Continuous Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ T_C = 25C
@ T_C = 100C
@ T_C = 25C
@ T_C = 100C
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R_JC(IGBT)
R_JC(DIODE)
R_JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G
E
Ratings
1000
 25
50
35
100
30
15
156
63
-55 to +150
-55 to +150
300
Typ.
--
--
--
Max.
0.8
2.4
25
Unit
V
V
A
A
A
A
A
W
W
C
C
C
Unit
C/W
C/W
C/W
©2006 Fairchild Semiconductor Corporation
1
FGA50N100BNTD Rev. C1
www.fairchildsemi.com