BCV27 Datasheet, PDF (3/5 Pages) NXP Semiconductors – NPN Darlington transistors

Typical Characteristics (continued)
Base-Emitter Saturation
Voltage vs Collector Current
2
β = 1000
1.6
- 40 ºC
1.2
25 °C
125 ºC
0.8
0.4
0
1
10
100
1000
I C - COLLECTOR CURRENT (mA)
P 05
Collector-Cutoff Current
vs Ambient Temperature
100
V_CB = 30V
10
1
0.1
0.01
25
50
75
100
125
T_A- AMBIENT TEMPERATURE (ºC)
P0
Input and Output Capacitance
vs Reverse Voltage
f = 1.0 MHz
20
10
Cib
5
Cob
2
0.1
1
10
100
Vce- COLLECTOR VOLTAGE(V)
P0
NPN Darlington Transistor
(continued)
Base Emitter ON Voltage vs
Collector Current
2
1.6
- 40 ºC
1.2
0.8
25 °C
125 ºC
0.4
V_CE= 5V
0
1
10
100
1000
I _C - COLLECTOR CURRENT (mA)
P0
Collector-Emitter Breakdown
Voltage with Resistance
Between Emitter-Base
62.5
62
61.5
61
60.5
60
59.5
0.1
1
10
100
1000
RESISTANCE (kΩ)
Gain Bandwidth Product
vs Collector Current
50
Vce = 5V
40
30
20
10
0
1
10
20
50
100 150
I_C- COLLECTOR CURRENT (mA)
P 05