BCV27 Datasheet, PDF (2/5 Pages) NXP Semiconductors – NPN Darlington transistors

NPN Darlington Transistor
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
OFF CHARACTERISTICS
V_(BR)CEO
Collector-Emitter Breakdown Voltage
V(BR)CBO
Collector-Base Breakdown Voltage
V_(BR)EBO
Emitter-Base Breakdown Voltage
ICBO
Collector-Cutoff Current
I_EBO
Emitter-Cutoff Current
I_C = 10 mA, I_B = 0
I_C = 10 µA, I_E = 0
I_E = 100 nA, I_C = 0
VCB = 30 V, IE = 0
V_EB = 10 V, I_C = 0
30
V
40
V
10
V
0.1 µA
0.1 µA
ON CHARACTERISTICS
h_FE
DC Current Gain
V_CE(sat)
V_BE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
I_C = 1.0 mA, V_CE = 5.0 V
I_C = 10 mA, V_CE = 5.0 V
IC = 100 mA, VCE = 5.0 V
IC = 100 mA, IB = 0.1 mA
I_C = 100 mA, I_B = 0.1 mA
4,000
10,000
20,000
1.0
V
1.5
V
SMALL SIGNAL CHARACTERISTICS
f_T
Current Gain - Bandwidth Product
C_C
Collector Capacitance
I_C = 30 mA, V_CE = 5.0 V,
f = 100 MHz
V_CB = 30 V, I_E = 0, f = 1.0 MHz
220
MHz
3.5
pF
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
250
200 V_CE= 5V
150
100
- 40 °C
50
25 °C
125 °C
0
0.001
0.01
0.1
1
I _C - COLLECTOR CURRENT (A)
Collector-Emitter Saturation
Voltage vs Collector Current
1.6
β = 1000
1.2
0.8
- 40 ºC
0.4
25°C
125 ºC
0
1
10
100
1000
I _C - COLLECTOR CURRENT (mA)
P0