BCV27 Datasheet, PDF (1/5 Pages) NXP Semiconductors – NPN Darlington transistors

Discrete POWER & Signal
Technologies
BCV27
C
SOT-23
Mark: FF
E
B
NPN Darlington Transistor
This device is designed for applications requiring extremely
high current gain at collector currents to 1.0 A. Sourced from
Process 05.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
V_CEO
Collector-Emitter Voltage
30
VCBO
Collector-Base Voltage
40
V_EBO
Emitter-Base Voltage
10
I_C
T_J, T_stg
Collector Current - Continuous
Operating and Storage Junction Temperature Range
1.2
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES :
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD
Total Device Dissipation
Derate above 25°C
RθJA
Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
Max
*BCV27
350
2.8
357
Units
V
V
V
A
°C
Units
mW
mW/°C
°C/W
©1997 Fairchild Semiconductor Corporation