2N5401 Datasheet, PDF (3/4 Pages) NXP Semiconductors – PNP high-voltage transistor

Typical Characteristics
PNP General Purpose Amplifier
(continued)
Typical Pulsed Current Gain
vs Collector Current
200
V _CE = 5V
150
125 °C
100
25 °C
- 40 ºC
50
0
0.0001
0.001
0.01
0.1
1
I _C - COLLECTOR CURRENT (A)
Base-Emitter Saturation
Voltage vs Collector Current
1
0.8
0.6
0.4
0.2
0.1
- 40 ºC
25 °C
125 ºC
β = 10
1
10
100
I _C - COLLECTOR CURRENT (mA)
P4
Collector-Cutoff Current
vs Ambient Temperature
100
V _CB = 100V
10
1
0.1
25
50
75
100
125
150
TA - AMBIENT TEMPERATURE (ºC)
P4
Collector-Emitter Saturation
Voltage vs Collector Current
0.4
β = 10
0.3
0.2
25 °C
125 ºC
0.1
- 40 ºC
0
0.1
1
10
100
I _C - COLLECTOR CURRENT (mA)
P 74
Base-Emitter ON Voltage vs
Collector Current
1
0.8
0.6
0.4
0.2
0.1
- 40 ºC
25 °C
125 ºC
V _CE = 5V
1
10
100
I _C - COLLECTOR CURRENT (mA)
P4
Collector-Emitter Breakdown
Voltage with Resistance
Between Emitter-Base
220
210
200
190
180
170
0.1
1
10
100
1000
RESISTANCE (k Ω)