2N5401 Datasheet, PDF (1/4 Pages) NXP Semiconductors – PNP high-voltage transistor

Discrete POWER & Signal
Technologies
2N5401
MMBT5401
C
C
BE
TO-92
SOT-23
Mark: 2L
E
B
PNP General Purpose Amplifier
This device is designed as a general purpose amplifier and switch
for applications requiring high voltages. Sourced from Process 74.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
V_CEO
Collector-Emitter Voltage
150
VCBO
Collector-Base Voltage
160
V_EBO
Emitter-Base Voltage
5.0
I_C
Collector Current - Continuous
200
T_J, T_stg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
P_D
Total Device Dissipation
Derate above 25°C
Rθ_JC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Max
2N5401
625
5.0
83.3
200
*MMBT5401
350
2.8
357
Units
mW
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation