2N5401 Datasheet, PDF (2/4 Pages) NXP Semiconductors – PNP high-voltage transistor

PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V_(BR)CEO
Collector-Emitter Breakdown Voltage* I_C = 1.0 mA, I_B = 0
150
V
V(BR)CBO
Collector-Base Breakdown Voltage
I_C = 100 µA, I_E = 0
160
V
V_(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10 µA, IC = 0
5.0
V
I_CBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
V_CB = 120 V, I_E = 0
VCB = 120 V, IE = 0, TA = 100°C
VEB = 3.0 V, IC = 0
50
nA
50
µA
50
nA
ON CHARACTERISTICS*
h_FE
DC Current Gain
VCE(sat)
V_BE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
I_C = 1.0 mA, V_CE = 5.0 V
I_C = 10 mA, V_CE = 5.0 V
I_C = 50 mA, V_CE = 5.0 V
I_C = 10 mA, I_B = 1.0 mA
I_C = 50 mA, I_B = 5.0 mA
I_C = 10 mA, I_B = 1.0 mA
IC = 50 mA, IB = 5.0 mA
SMALL SIGNAL CHARACTERISTICS
f_T
Current Gain - Bandwidth Product
C_obo
Output Capacitance
NF
Noise Figure
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
I_C = 10 mA, V_CE = 10 V,
f = 100 MHz
VCB = 10 V, IE = 0,
f = 1.0 MHz
IC = 250 µA, VCE = 5.0 V,
RS = 1.0 kΩ,
f = 10 Hz to 15.7 kHz
50
60
240
50
0.2
V
0.5
V
1.0
V
1.0
V
100
300
MHz
6.0
pF
8.0
dB
Spice Model
PNP (Is=21.48f Xti=3 Eg=1.11 Vaf=100 Bf=132.1 Ne=1.375 Ise=21.48f Ikf=.1848 Xtb=1.5 Br=3.661 Nc=2
Isc=0 Ikr=0 Rc=1.6 Cjc=17.63p Mjc=.5312 Vjc=.75 Fc=.5 Cje=73.39p Mje=.3777 Vje=.75 Tr=1.476n Tf=641.9p
Itf=0 Vtf=0 Xtf=0 Rb=10)