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FDS2572 Datasheet, PDF (2/12 Pages) Fairchild Semiconductor – 150V, 0.047 Ohms, 4.9A, N-Channel UltraFET Trench MOSFET
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Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
150
VDS = 120V
-
VGS = 0V
TC = 150o
-
VGS = ±20V
-
-
-
V
-
1
µA
-
250
-
±100 nA
On Characteristics
VGS(TH)
rDS(ON)
rDS(ON)
Gate to Source Threshold Voltage
Drain to Source On Resistance
Drain to Source On Resistance
VGS = VDS, ID = 250µA
ID = 4.9A, VGS = 10V
ID = 4.9A, VGS = 6V
2
-
4
V
-
0.040 0.047 Ω
-
0.044 0.053 Ω
Dynamic Characteristics
CISS
COSS
CRSS
Qg(TOT)
Qg(TH)
Qgs
Qgd
Qgs2
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Gate Charge Threshold to Plateau
VDS = 25V, VGS = 0V,
f = 1MHz
-
2050
-
pF
-
220
-
pF
-
48
-
pF
VGS= 0V to 10V
-
VGS = 0V to 2V
VDD = 75V
ID = 4.9A
Ig = 1.0mA
-
-
-
29
38
nC
4
6
nC
8
-
nC
6
-
nC
-
4
-
nC
Switching Characteristics
tON
td(ON)
tr
td(OFF)
tf
tOFF
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
VDD = 75V, ID = 4.9A
VGS = 10V, RG = 10Ω
-
-
27
ns
-
14
-
ns
-
4
-
ns
-
44
-
ns
-
22
-
ns
-
-
100
ns
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Voltage
trr
Reverse Recovery Time
QRR
Reverse Recovered Charge
ISD = 4.9A
-
ISD = 3.1A
-
ISD = 4.9A, dISD/dt =100A/µs
-
ISD = 4.9, dISD/dt =100A/µs
-
-
1.25
V
-
1.0
V
-
72
ns
-
158 nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal referance is defined as the solder mounting surface of the
drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design.
2. RθJA is measured with 1.0in2 copper on FR-4 board
©2001 Fairchild Semiconductor Corporation
FDS2572 Rev. B, October 2001
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