FDS2572 Datasheet, PDF (1/12 Pages) Fairchild Semiconductor – 150V, 0.047 Ohms, 4.9A, N-Channel UltraFET Trench MOSFET

October 2001
FDS2572
150V, 0.047 Ohms, 4.9A, N-Channel UltraFET^® Trench MOSFET
General Description
UltraFET^® devices combine characteristics that enable
benchmark efficiency in power conversion applications.
Optimized for Rds(on), low ESR, low total and Miller gate
charge, these devices are ideal for high frequency DC to
DC converters.
Applications
• DC/DC converters
• Telecom and Data-Com Distributed Power Architectures
• 48-volt I/P Half-Bridge/Full-Bridge
• 24-volt Forward and Push-Pull topologies
Features
• R_DS(ON) = 0.040Ω (Typ.), V_GS = 10V
• Q_g(TOT) = 29nC (Typ.), V_GS = 10V
• Low Q_RR Body Diode
• Maximized efficiency at high frequencies
• UIS Rated
DD
DD
5
DD
DD
6
SO-8
Pin 1 SO-8 ^SS ^{SS SS GG}
7
8
MOSFET Maximum Ratings T_A=25°C unless otherwise noted
Symbol
V_DSS
V_GS
I_D
P_D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T_C = 25^oC, V_GS = 10V, R_θJA = 50 ^oC/W)
Continuous (T_C = 100^oC, V_GS = 10V, R_θJA = 50 ^oC/W)
Pulsed
Power dissipation
Derate above 25^oC
T_J, T_STG
Operating and Storage Temperature
Ratings
150
±20
4.9
3.1
Figure 4
2.5
20
-55 to 150
Thermal Characteristics
R_θJC
Thermal Resistance Junction to Case
(NOTE1)
25
R_θJA
Thermal Resistance Junction to Case at 10 seconds
(NOTE2)
50
R_θJA
Thermal Resistance Junction to Case at steady state
(NOTE2)
85
Package Marking and Ordering Information
Device Marking
FDS2572
Device
FDS2572
Reel Size
330mm
Tape Width
12mm
4
3
2
1
Units
V
V
A
A
A
W
mW/^oC
o_C
o_C/W
o_C/W
o_C/W
Quantity
2500units
©2001 Fairchild Semiconductor Corporation
FDS2572 Rev. B, October 2001