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| FDMS86101DC Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – N-Channel Dual CoolTM Power Trench® MOSFET 100 V, 60 A, 7.5 mΩ | |||
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Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
100
ÎBVDSS
ÎTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
VDS = 80 V, VGS = 0 V
IGSS
Gate to Source Leakage Current
VGS = ±20 V, VDS = 0 V
On Characteristics
VGS(th)
ÎVGS(th)
ÎTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
VGS = VDS, ID = 250 μA
2
ID = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 14.5 A
VGS = 6 V, ID = 11.5 A
VGS = 10 V, ID = 14.5 A, TJ = 125 °C
VDD = 10 V, ID = 14.5 A
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 50 V, VGS = 0 V,
f = 1 MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(TOT)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Qgs
Total Gate Charge
Qgd
Gate to Drain âMillerâ Charge
VDD = 50 V , ID = 14.5 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 5 V
VDD = 50 V
ID = 14.5 A
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 2.7 A
VGS = 0 V, IS = 14.5 A
(Note 2)
(Note 2)
IF = 14.5 A, di/dt = 100 A/μs
Typ
70
2.7
-10
6
8.3
10
44
2354
467
23
1.4
14
8.2
25
5.5
31
18
8.3
7
0.71
0.78
54
62
Max Units
V
mV/°C
1
μA
±100 nA
4
V
mV/°C
7.5
12
mΩ
13
S
3135 pF
625
pF
35
pF
Ω
25
ns
17
ns
40
ns
11
ns
44
nC
25
nC
nC
nC
1.2
V
1.3
87
ns
99
nC
©2012 Fairchild Semiconductor Corporation
2
FDMS86101DC Rev. C1
www.fairchildsemi.com
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