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FDMS86101DC Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel Dual CoolTM Power Trench® MOSFET 100 V, 60 A, 7.5 mΩ | |||
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FDMS86101DC
N-Channel Dual CoolTM Power Trench® MOSFET
February 2012
100 V, 60 A, 7.5 mΩ
Features
 Dual CoolTM Top Side Cooling PQFN package
 Max rDS(on) = 7.5 mΩ at VGS = 10 V, ID = 14.5 A
 Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 11.5 A
 High performance technology for extremely low rDS(on)
 100% UIL Tested
 RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductorâs advanced Power Trench® process.
Advancements in both silicon and Dual CoolTM package
technologies have been combined to offer the lowest rDS(on)
while maintaining excellent switching performance by extremely
low Junction-to-Ambient thermal resistance.
Applications
 Primary DC-DC MOSFET
 Secondary Synchronous Rectifier
 Load Switch
S
Pin 1
D
D
D
S
D
D
S
D
G
S
S
S
Pin 1
Top
Power 56
Bottom
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
S
G
(Note 1a)
(Note 3)
(Note 1a)
D
D
Ratings
100
±20
60
88
14.5
200
216
125
3.2
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJC
RθJA
RθJA
RθJA
RθJA
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Top Source)
2.3
(Bottom Drain)
1.0
(Note 1a)
38
(Note 1b)
81
(Note 1i)
16
(Note 1j)
23
(Note 1k)
11
°C/W
Device Marking
86101
Device
FDMS86101DC
Package
Dual CoolTM Power 56
Reel Size
13ââ
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
1
FDMS86101DC Rev. C1
www.fairchildsemi.com
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