ES25P40 Datasheet, PDF(28/35 Page) Excel Semiconductor Inc. – 4Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface

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ES25P40 Datasheet, PDF (28/35 Pages) Excel Semiconductor Inc. – 4Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface

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ADVANCED INFORMATION

DC CHARACTERISTICS

EE SS II

Excel Semiconductor inc.

This section summarizes the DC and AC Characteristics of the device. Designers should check that the oper-

ating conditions in their circuit match the measurement conditions specified in the Test Specifications in Table

7, when relying on the quoted parameters.

Table.6 DC Characteristics

Symbol Description

Test Conditions

Vcc Supply Voltage

ILI Input Leakage Current

VIN = GND to Vcc

ISB Standby Current

CS# = Vcc

IDP Deep Power Down Current

CS# = Vcc

ILO Output Leakage Current

VIN = GND to Vcc

ICCI Active Read Current

SCK = 0.1 Vcc / 0.9 Vcc 40MHz

SO = Open

SCK = 0.1Vcc / 0.9 Vcc 75 MHz

SO= Open

ICC2 Active Page Program Current CS# = Vcc

ICC3 Active WRSR Current

CS# = Vcc

ICC4 Active Sector Erase Current CS# = Vcc

ICC5 Active Bulk Erase Current

CS# = Vcc

VIL Input Low Voltage

VIH Input High Voltage

VOL Output Low Voltage

IOL = 1.6 mA, Vcc = Vcc min

VOH Output High Voltage

IOH = -0.1mA,

Notes:

1. Typical values are at TA = 25oC and Vcc = 3V

Min.

2.7

Typ. Max.

3.6

Unit

- 0.3

0.7 Vcc

Vcc - 0.2

0.3 Vcc V

Vcc + 0.5 V

0.4

ES25P40

Rev. 0D May 11 , 2006

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