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EMP107 Datasheet, PDF (2/4 Pages) Excelics Semiconductor, Inc. – 5.9 - 7.9 GHz Power Amplifier MMIC
UPDATED 05/08/2008
Typical Performance:
1. Small Signal Performance (@7V, 200mA)
EMP107
5.9 – 7.9 GHz Power Amplifier MMIC
25
20
15
10
5
0
-5
-10
-15
-20
-25
4
EMP107 Small Signal Performance
DB(|S[2,1]|) *
DB(|S[1,1]|) *
DB(|S[2,2]|) *
6
8
10
Frequency (GHz)
2. OIMD VS Pout @7V, 200mA (@7GHz, ∆f=10MHz)
EMP107 OIMD (dBc) vs. Pout(dBm)
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
-70
0
OIMD3
OIMD5
5
10
15
20
25
Each Tone Pout (dBm)
3. P-1 VS Vds @Idsq=200mA
EMP107 P1dB(dBm) vs. Vds
27
26
25
24
23
22
21
20
19
5
6
7
8
9
Frequency (GHz)
Vds=5V
Vds=7V
APPLICATION INFORMATION (CAUTION: THIS IS AN ESD SENSITIVE DEVICE)
Chip carrier should match GaAs thermal coefficienat of expansion and have high thermal conductivity, such as copper tungsten
or copper molybdenum. The chip carrier should be nickel-gold plated and capable of withstanding 325ºC for 20 minutes.
Die attach should be done with Gold/Tin (80/20) eutectic alloy in inert ambient gas. The backside is used as heatsinking, DC,
and RF contacts.
All die attach and wire bond equipment, especially the tools which touch a die, should be well grounded to avoid accidental
discharge through a die.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 2 of 4
Revised May 2008