EMP107 Datasheet, PDF (1/4 Pages) Excelics Semiconductor, Inc. – 5.9 - 7.9 GHz Power Amplifier MMIC

UPDATED 05/08/2008
EMP107
5.9 – 7.9 GHz Power Amplifier MMIC
FEATURES
• 5.9 – 7.9 GHz Operating Frequency Range
• 24dBm Output Power at 1dB Compression
• 19.0 dB Typical Small Signal Gain
• -41dBc OIMD3 @Each Tone Pout 14 dBm
APPLICATIONS
• Point-to-point and point-to-multipoint radio
• Military Radar Systems
Dimension: 1130um X 2250um
Thickness: 85um + 15um
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS
(Tb = 25 °C, 50 ohm, Vds = 7 V, Idsq = 200 mA, Unless Otherwise Specified)
SYMBOL
PARAMETER/TEST CONDITIONS
MIN TYP MAX UNITS
F
Operating Frequency Range
5.9
7.9 GHz
P1dB
Output Power at 1dB Gain Compression
23
24
dBm
Gss
OIMD3
Small Signal Gain
17.0 19.0
dB
Output 3^rd Order Intermodulation Distortion ∆f=10MHz,
Each Tone Pout 14dBm, 7V, 60%+10%Idss
-41
-38
dBc
Input RL Input Return Loss
-12
-8
dB
Output RL Output Return Loss
-6
dB
Idss
Saturated Drain Current
Vds =3V, V_GS =0V
245
285
330
mA
Vds
Drain to Source Voltage
7
8
V
NF
Noise Figure @7GHz
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
8
dB
44
o_C/W
Tb
Operating Base Plate Temperature
- 35
+ 85
ºC
MAXIMUM RATINGS AT 25°C^1,2
SYMBOL
CHARACTERISTIC
ABSOLUTE
Vds
Drain to Source Voltage
12V
V_GS
Gate to Source Voltage
-8V
Ids
Drain Current
Idss
I_GSF
Forward Gate Current
28mA
P_IN
Input Power
21dBm
T_CH
Channel Temperature
175°C
T_STG
Storage Temperature
-65/175°C
P_T
Total Power Dissipation
3.1W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation Vds*Ids < (T_CH –Tb)/R_TH
CONTINUOUS
8V
-4V
325mA
4.5 mA
@ 3dB compression
150°C
-65/150°C
2.6W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: [phone] Fax: [phone] Web: www.excelics.com
page 1 of 4
Revised May 2008