EM6AB080TSB-4G Datasheet, PDF (39/62 Pages) Etron Technology, Inc. – 64M x 8 bit DDR Synchronous DRAM (SDRAM

EtronTech
EM6AB080
Figure 19. Write to Write Max tDQSS, Non Consecutive
CK
CK
COMMAND
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11
WRITE
NOP
NOP
WRITE
NOP
NOP
ADDRESS
DQS
DQ
DM
Bank
Col n
tDQSS (max)
DI
n
Bank
Col o
DI
o
DI n, etc. = Data In for column n, etc.
3 subsequent elements of Data In are applied in the programmed order following DI n
3 subsequent elements of Data In are applied in the programmed order following DI o
Non-interrupted bursts of 4 are shown
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Etron Confidential
39
Rev.1.1 Dec. /2013