EM6AB080TSB-4G Datasheet, PDF (1/62 Pages) Etron Technology, Inc. – 64M x 8 bit DDR Synchronous DRAM (SDRAM

EtronTech
EM6AB080
Etron Confidential
64M x 8 bit DDR Synchronous DRAM (SDRAM)
Advanced (Rev. 1.1, Dec. /2013)
Features
• ^{Fast clock rate: 250/200MHz}
• ^{Differential Clock CK &} CK
• ^{Bi-directional DQS}
• ^{DLL enable/disable by EMRS}
• ^{Fully synchronous operation}
• ^{Internal pipeline architecture}
• ^{Four internal banks, 16M x 8-bit for each bank}
• ^{Programmable Mode and Extended Mode registers}
- CAS Latency: 2, 2.5, 3
- Burst length: 2, 4, 8
- Burst Type: Sequential & Interleaved
• ^{Individual byte write mask control}
• ^{DM Write Latency = 0}
• ^{Auto Refresh and Self Refresh}
• ^{8192 refresh cycles / 64ms}
• ^{Precharge & active power down}
• ^{Power supplies: V}DD & ^VDDQ ^{= 2.5V Ô 0.2V}
• ^{Interface: SSTL_2 I/O Interface}
• ^{Package: 66 Pin TSOP II, 0.65mm pin pitch}
- Pb and Halogen free
• ^{Package: 60-Ball, 8x13x1.2 mm (max) TFBGA}
- Pb free and Halogen Free
Overview
The EM6AB080 SDRAM is a high-speed CMOS
double data rate synchronous DRAM containing 512
Mbits. It is internally configured as a quad 16M x 8-bit
DRAM with a synchronous interface (all signals are
registered on the positive edge of the clock signal, CK).
Data outputs occur at both rising edges of CK and CK .
Read and write accesses to the SDRAM are burst
oriented; accesses start at a selected location and
continue for a programmed number of locations in a
programmed sequence. Accesses begin with the
registration of a BankActivate command which is then
followed by a Read or Write command. The EM6AB080
provides programmable Read or Write burst lengths of
2, 4, or 8. An auto precharge function may be enabled
to provide a self-timed row precharge that is initiated at
the end of the burst sequence. The refresh functions,
either Auto or Self Refresh are easy to use. In addition,
EM6AB080 features programmable DLL option. By
having a programmable mode register and extended
mode register, the system can choose the most
suitable modes to maximize its performance. These
devices are well suited for applications requiring high
memory bandwidth, result in a device particularly well
suited to high performance main memory and graphics
applications.
Table 1.Ordering Information
Part Number
Clock Frequency
Data Rate
EM6AB080TSB-4G
250MHz
500Mbps/pin
EM6AB080TSB-5G
200MHz
400Mbps/pin
EM6AB080WKB-4H
250MHz
500Mbps/pin
EM6AB080WKB-5H
200MHz
400Mbps/pin
TS: indicates TSOPII package
WK: indicates TFBGA package
B: indicates Generation Code
G: indicates Pb free and Halogen Free for TSOPII Package
H: indicates Pb free and Halogen Free for TFBGA Package
Package
TSOPII
TSOPII
TFBGA
TFBGA
Etron Technology, Inc.
No. 6, Technology Rd. V, Hsinchu Science Park, Hsinchu, Taiwan 30078, R.O.C.
TEL: [phone] FAX: [phone]
Etron Technology, Inc. reserves the right to change products or specification without notice.