EM6A8160TSC-4G Datasheet, PDF (26/53 Pages) Etron Technology, Inc. – 4M x 16 DDR Synchronous DRAM

EtronTech
EM6A8160
Figure 16. Write Max DQSS
T0 T1 T2 T3 T4 T5 T6 T7
CK
CK
COMMAND
WRITE
NOP
NOP
NOP
ADDRESS
DQS
Bank A,
Col n
tDQSS
max
DQ
DI
n
DM
DI n = Data In for column n
3 subsequent elements of Data In are applied in the programmed
order following DI n
A non-interrupted burst of 4 is shown
A10 is LOW with the WRITE command (AUTO PRECHARGE
disabled)
Don’t Care
Rev. 1.1
26
Oct. /2015