EM6A8160TSC-4G Datasheet, PDF (1/53 Pages) Etron Technology, Inc. – 4M x 16 DDR Synchronous DRAM

EtronTech
EM6A8160
4M x 16 DDR Synchronous DRAM (SDRAM)
Preliminary (Rev. 1.1, Oct. /2015)
Features
• ^{Fast clock rate: 200/250 MHz}
• ^{Differential Clock CK &} CK
• ^{Bi-directional DQS}
• ^{DLL enable/disable by EMRS}
• ^{Fully synchronous operation}
• ^{Internal pipeline architecture}
• ^{Four internal banks, 1M x 16-bit for each bank}
• ^{Programmable Mode and Extended Mode Registers}
- CAS Latency: 2, 2.5, 3
- Burst length: 2, 4, 8
- Burst Type: Sequential & Interleaved
• ^{Individual byte writes mask control}
• ^{DM Write Latency = 0}
• ^{Auto Refresh and Self Refresh}
• ^{4096 refresh cycles / 64ms}
• ^{Precharge & active power down}
• ^{Power supplies: V}DD ^{& V}DDQ ^{= 2.5V ± 0.2V}
• ^{Operating temperature: T}A ^{= 0~70°C}
• ^{Interface: SSTL_2 I/O Interface}
• ^{Package: 66 Pin TSOP II, 0.65mm pin pitch}
- Pb free and Halogen free
• ^{Package: 60-Ball, 8x13x1.2 mm (max) FBGA}
- Pb free and Halogen Free
Overview
The EM6A8160 SDRAM is a high-speed CMOS
double data rate synchronous DRAM containing 64
Mbits. It is internally configured as a quad 1M x 16
DRAM with a synchronous interface (all signals are
registered on the positive edge of the clock signal,
CK). Data outputs occur at both rising edges of CK
and _CK . Read and write accesses to the SDRAM
are burst oriented; accesses start at a selected
location and continue for a programmed number of
locations in a programmed sequence. Accesses
begin with the registration of a BankActivate command
which is then followed by a Read or Write command.
The EM6A8160 provides programmable Read or
Write burst lengths of 2, 4, 8. An auto precharge
function may be enabled to provide a self-timed row
precharge that is initiated at the end of the burst
sequence. The refresh functions, either Auto or Self
Refresh are easy to use. In addition, EM6A8160
features programmable DLL option. By having a
programmable mode register and extended mode
register, the system can choose the most suitable
modes to maximize its performance. These devices
are well suited for applications requiring high memory
bandwidth and high performance.
Table 1. Ordering Information
Part Number Clock Frequency Data Rate
EM6A8160TSC-4G
250MHz
500Mbps/pin
EM6A8160TSC-5G
200MHz
400Mbps/pin
EM6A8160BKC-4H
250MHz
500Mbps/pin
EM6A8160BKC-5H
200MHz
400Mbps/pin
TS: indicates TSOP II Package
BK: indicates 8x13x1.2mm FBGA Package
C: indicates Generation Code
G: indicates Pb and Halogen Free for TSOPII Package
H: indicates Pb and Halogen Free for FBGA Package
Power Supply
VDD 2.5V, VDDQ 2.5V
VDD 2.5V, VDDQ 2.5V
VDD 2.5V, VDDQ 2.5V
VDD 2.5V, VDDQ 2.5V
Package
TSOPII
TSOPII
FBGA
FBGA
Etron Technology, Inc.
No. 6, Technology Rd. V, Hsinchu Science Park, Hsinchu, Taiwan 30078, R.O.C.
TEL: [phone] FAX: [phone]
Etron Technology, Inc. reserves the right to change products or specification without notice.